Performance of irradiated nþ-on-p silicon microstrip sensors
نویسندگان
چکیده
The silicon microstrip detector type with nþ readout fabricated on p bulk, nþ-on-p, is a candidate to be operational in radiation environments much severer than in LHC. We characterized nþ-on-p detectors which were irradiated up to 1:1 10 protons=cm 10 years ago. The noise level and charge collection were evaluated using the ATLAS SCT readout electronics system. Radiation-induced increase in the noise and loss in the charge collection are not significant. The charge collection is not degraded in any particular point in the inter-strip region when the detector is operated under partial depletion. r 2006 Elsevier B.V. All rights reserved. PACS: 29.40.Gx; 29.40.Wk
منابع مشابه
Radiation Damage Studies of Silicon Microstrip Sensors
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